Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion
Identifieur interne : 000652 ( Main/Repository ); précédent : 000651; suivant : 000653Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion
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Abstract
The world requires inexpensive, reliable, and sustainable energy sources. Solar photovoltaic (PV) technology, which converts sunlight directly into electricity, is an enormously promising solution to our energy challenges. This promise increases as the efficiencies are improved. One straightforward method of increasing PV device efficiency is to utilize multi-junction cells, each of which is responsible for absorbing a different range of wavelengths in the solar spectrum. Indium gallium nitride (InxGa1-xN) has a variable band gap from 0.7 to 3.4 eV that covers nearly the whole solar spectrum. In addition, InxGa1-xN can be viewed as an ideal candidate PV material for both this potential band gap engineering and microstructural engineering in nanocolumns that offer optical enhancement. It is clear that InxGa1-xN is an extremely versatile potential PV material that enables several known photovoltaic device configurations and multi-junctions with theoretic efficiencies over 50 pct. This potential is driving immense scientific interest in the material system. This paper reviews the solar PV technology field and the basic properties of InxGa1-xN materials and PV devices. The challenges that remain in realizing a high-efficiency InxGa1-xN PV device are summarized along with paths for future work. Finally, conclusions are drawn about the potential for InxGa1-xN photovoltaic technology in the future.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion</title><author><name sortKey="Mclaughlin, Dirk V P" uniqKey="Mclaughlin D">Dirk V. P. Mclaughlin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Mechanical and Materials Engineering, Queen's University</s1><s2>Kingston ON</s2><s3>CAN</s3><sZ>1 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Kingston ON</wicri:noRegion></affiliation></author><author><name sortKey="Pearce, Joshua M" uniqKey="Pearce J">Joshua M. Pearce</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science & Engineering, Michigan Technological University, 601 M&M Building, 1400 Townsend Drive</s1><s2>Houghton, MI 49931-1295</s2><s3>USA</s3><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Houghton, MI 49931-1295</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electrical & Computer Engineering, Michigan Technological University</s1><s3>USA</s3><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Department of Electrical & Computer Engineering, Michigan Technological University</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0159072</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0159072 INIST</idno><idno type="RBID">Pascal:13-0159072</idno><idno type="wicri:Area/Main/Corpus">000F29</idno><idno type="wicri:Area/Main/Repository">000652</idno></publicationStmt><seriesStmt><idno type="ISSN">1073-5623</idno><title level="j" type="abbreviated">Metall. mater. trans., A Phys. metall. mater. sci.</title><title level="j" type="main">Metallurgical and materials transactions. A, Physical metallurgy and materials science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Nitrides</term><term>Solar energy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Nitrure</term><term>Energie solaire</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The world requires inexpensive, reliable, and sustainable energy sources. Solar photovoltaic (PV) technology, which converts sunlight directly into electricity, is an enormously promising solution to our energy challenges. This promise increases as the efficiencies are improved. One straightforward method of increasing PV device efficiency is to utilize multi-junction cells, each of which is responsible for absorbing a different range of wavelengths in the solar spectrum. Indium gallium nitride (In<sub>x</sub>Ga<sub>1-x</sub>N) has a variable band gap from 0.7 to 3.4 eV that covers nearly the whole solar spectrum. In addition, In<sub>x</sub>Ga<sub>1-x</sub>N can be viewed as an ideal candidate PV material for both this potential band gap engineering and microstructural engineering in nanocolumns that offer optical enhancement. It is clear that In<sub>x</sub>Ga<sub>1-x</sub>N is an extremely versatile potential PV material that enables several known photovoltaic device configurations and multi-junctions with theoretic efficiencies over 50 pct. This potential is driving immense scientific interest in the material system. This paper reviews the solar PV technology field and the basic properties of In<sub>x</sub>Ga<sub>1-x</sub>N materials and PV devices. The challenges that remain in realizing a high-efficiency In<sub>x</sub>Ga<sub>1-x</sub>N PV device are summarized along with paths for future work. Finally, conclusions are drawn about the potential for In<sub>x</sub>Ga<sub>1-x</sub>N photovoltaic technology in the future.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1073-5623</s0></fA01><fA02 i1="01"><s0>MMTAEB</s0></fA02><fA03 i2="1"><s0>Metall. mater. trans., A Phys. metall. mater. sci.</s0></fA03><fA05><s2>44</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion</s1></fA08><fA11 i1="01" i2="1"><s1>MCLAUGHLIN (Dirk V. P.)</s1></fA11><fA11 i1="02" i2="1"><s1>PEARCE (Joshua M.)</s1></fA11><fA14 i1="01"><s1>Department of Mechanical and Materials Engineering, Queen's University</s1><s2>Kingston ON</s2><s3>CAN</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Materials Science & Engineering, Michigan Technological University, 601 M&M Building, 1400 Townsend Drive</s1><s2>Houghton, MI 49931-1295</s2><s3>USA</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electrical & Computer Engineering, Michigan Technological University</s1><s3>USA</s3><sZ>2 aut.</sZ></fA14><fA20><s1>1947-1954</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>3179A</s2><s5>354000173321730360</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>113 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0159072</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Metallurgical and materials transactions. A, Physical metallurgy and materials science</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The world requires inexpensive, reliable, and sustainable energy sources. Solar photovoltaic (PV) technology, which converts sunlight directly into electricity, is an enormously promising solution to our energy challenges. This promise increases as the efficiencies are improved. One straightforward method of increasing PV device efficiency is to utilize multi-junction cells, each of which is responsible for absorbing a different range of wavelengths in the solar spectrum. Indium gallium nitride (In<sub>x</sub>Ga<sub>1-x</sub>N) has a variable band gap from 0.7 to 3.4 eV that covers nearly the whole solar spectrum. In addition, In<sub>x</sub>Ga<sub>1-x</sub>N can be viewed as an ideal candidate PV material for both this potential band gap engineering and microstructural engineering in nanocolumns that offer optical enhancement. It is clear that In<sub>x</sub>Ga<sub>1-x</sub>N is an extremely versatile potential PV material that enables several known photovoltaic device configurations and multi-junctions with theoretic efficiencies over 50 pct. This potential is driving immense scientific interest in the material system. This paper reviews the solar PV technology field and the basic properties of In<sub>x</sub>Ga<sub>1-x</sub>N materials and PV devices. The challenges that remain in realizing a high-efficiency In<sub>x</sub>Ga<sub>1-x</sub>N PV device are summarized along with paths for future work. 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